Hot electron transport in heterostructures
Identifieur interne : 000078 ( Russie/Analysis ); précédent : 000077; suivant : 000079Hot electron transport in heterostructures
Auteurs : RBID : Pascal:11-0152792Descripteurs français
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Abstract
The enhancement of electron mobility and high-field drift velocity in a HEMT (high electron mobility transistor)-type channel of AIGaAs/InGaAs/AIGaAs double barrier heterostructures by reducing the electron-interface phonon interaction is obtained. The significant change in the electron concentration in the channel of the modulation-doped AlGaAs/InGaAs/AlGaAs heterostructures at low electric fields is experimentally discovered.
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Pascal:11-0152792Le document en format XML
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<author><name sortKey="Pozela, J" uniqKey="Pozela J">J. Pozela</name>
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<author><name sortKey="Pozela, K" uniqKey="Pozela K">K. Pozela</name>
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<author><name sortKey="Juciene, V" uniqKey="Juciene V">V. Juciene</name>
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<author><name sortKey="Shkolnik, A" uniqKey="Shkolnik A">A. Shkolnik</name>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium Gallium Arsenides Mixed</term>
<term>Carrier density</term>
<term>Double barrier structure</term>
<term>Drift velocity</term>
<term>Electric field effects</term>
<term>Electron mobility</term>
<term>Electron-phonon interactions</term>
<term>Gallium Indium Arsenides Mixed</term>
<term>Heterostructures</term>
<term>High field</term>
<term>Hot electrons</term>
<term>Modulation doping</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Electron chaud</term>
<term>Mobilité électron</term>
<term>Champ intense</term>
<term>Vitesse dérive</term>
<term>Structure 2 barrières</term>
<term>Interaction électron phonon</term>
<term>Densité porteur charge</term>
<term>Dopage modulé</term>
<term>Aluminium Gallium Arséniure Mixte</term>
<term>Gallium Indium Arséniure Mixte</term>
<term>Effet champ électrique</term>
<term>Hétérostructure</term>
<term>InGaAs</term>
<term>AlGaAs</term>
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<front><div type="abstract" xml:lang="en">The enhancement of electron mobility and high-field drift velocity in a HEMT (high electron mobility transistor)-type channel of AIGaAs/InGaAs/AIGaAs double barrier heterostructures by reducing the electron-interface phonon interaction is obtained. The significant change in the electron concentration in the channel of the modulation-doped AlGaAs/InGaAs/AlGaAs heterostructures at low electric fields is experimentally discovered.</div>
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<fA09 i1="01" i2="1" l="ENG"><s1>From heterostructures to nanostructures</s1>
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<fA11 i1="01" i2="1"><s1>POZELA (J.)</s1>
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<fA11 i1="02" i2="1"><s1>POZELA (K.)</s1>
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<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<s2>194021 St Petersburg</s2>
<s3>RUS</s3>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Innolume GmbH, Konrad-Adenauer-Allee 11</s1>
<s2>44263 Dortmund</s2>
<s3>DEU</s3>
<sZ>4 aut.</sZ>
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<fA43 i1="01"><s1>INIST</s1>
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<fA45><s0>10 ref.</s0>
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<fC01 i1="01" l="ENG"><s0>The enhancement of electron mobility and high-field drift velocity in a HEMT (high electron mobility transistor)-type channel of AIGaAs/InGaAs/AIGaAs double barrier heterostructures by reducing the electron-interface phonon interaction is obtained. The significant change in the electron concentration in the channel of the modulation-doped AlGaAs/InGaAs/AlGaAs heterostructures at low electric fields is experimentally discovered.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70C63</s0>
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<fC03 i1="01" i2="3" l="FRE"><s0>Electron chaud</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Hot electrons</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Mobilité électron</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Electron mobility</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Champ intense</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>High field</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Vitesse dérive</s0>
<s5>06</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Drift velocity</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Structure 2 barrières</s0>
<s5>07</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Double barrier structure</s0>
<s5>07</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Estructura 2 barrera</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Interaction électron phonon</s0>
<s5>08</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Electron-phonon interactions</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Densité porteur charge</s0>
<s5>09</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Carrier density</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Dopage modulé</s0>
<s5>10</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Modulation doping</s0>
<s5>10</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Doping modulado</s0>
<s5>10</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Aluminium Gallium Arséniure Mixte</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>11</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Aluminium Gallium Arsenides Mixed</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>11</s5>
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<fC03 i1="09" i2="X" l="SPA"><s0>Mixto</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>11</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Gallium Indium Arséniure Mixte</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>12</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Gallium Indium Arsenides Mixed</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>12</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Mixto</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>12</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Effet champ électrique</s0>
<s5>13</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Electric field effects</s0>
<s5>13</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Hétérostructure</s0>
<s5>15</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Heterostructures</s0>
<s5>15</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>InGaAs</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>AlGaAs</s0>
<s4>INC</s4>
<s5>53</s5>
</fC03>
<fN21><s1>101</s1>
</fN21>
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